Job description:
    
This contributor will work on the design, test and characterization of power devices fabricated on GaN-on-Si HEMT technology. The job responsibilities include:

1. Design of GaN semiconductor products for power applications;
2. Mask layout design and tapeout implementation;
3. Process flow design and setup and co-work with process engineers for device fabrication;
4. Plan, coordinate and evaluate process experiments (including DOE’s);
5. Device characterization including DC and dynamic analysis to optimize device design;
6. Identify potential performance, manufacturing, testing, and reliability concerns and opportunities for improvement.

                            
    

Minimum Requirements:
    
MS or PhD in Electronic Engineering, Engineering Physics or a related engineering degree
    
Practice Experience on power devices (GaN-on-Si power device preferred)
    
    
Preferred Qualifications and Skills:

1. Deep understanding of power device physics;
2. Experience on power device design, fabrication and characterization;
3. Working experience with keysight B1505 and B1500 measurement platforms;
4. Experience on device TCAD simulators;
5. Demonstrated ability to work within schedule constraints;
6. Excellent communication and team skills;
7. Technical documentation experience.